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Journal
1.
A. E. Islam and M. A. Alam, “Variation Robustness in
Strained MOSFET”, Submitted to IEEE Electron Device Letters,
2009.
2.
S. Deora,
V. D. Maheta, A. E. Islam, M. A. Alam, and S. Mahapatra, “A
Common Framework of NBTI Generation and Recovery in Plasma Nitrided SiON
p-MOSFETs”, IEEE Electron
Device Letters, accepted, 2009.
3.
S.
Mahapatra, V. D. Maheta, S. Deora, E. N. Kumar, S. Purawat, C. Olsen, K.
Ahmed, A. E. Islam and M. A. Alam, “Material Dependence of
Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON
p-MOSFETs”, (Invited Paper) Journal of Electrochemical Society, 2009. PDF
4.
S.
Mahapatra, V. D. Maheta, A. E. Islam,
and M. A. Alam, “Isolation of NBTI Stress Generated Interface Trap
and Hole-Trapping Components in PNO p-MOSFETs”, IEEE Transaction of
Electron Devices (T-ED), 56(2), pp. 236-242, 2009. PDF
5.
M.
Masuduzzaman, A. E. Islam, and M. A. Alam, “Exploring the
Capability of Multi-Frequency Charge Pumping in Resolving Location and
Energy Levels of Traps within Dielectric”, IEEE Transaction of
Electron Devices (T-ED), 55(12), pp. 3421-3431, 2008. PDF
6.
A. E. Islam, and M. A. Alam, “On the Possibility of
Degradation-Free Field Effect Transistors”, Applied Physics Letter,
92 (173504), 2008. PDF
7.
A. E. Islam, G. Gupta, K. Ahmed, S. Mahapatra, M. A. Alam, “Optimization
of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and
Analytical Models”, IEEE Transaction of Electron Devices (T-ED), 55(5),
pp. 1143-1152, 2008. PDF
8.
A. E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra, and M. A.
Alam, “Recent Issues in Negative Bias Temperature Instability:
Initial Degradation, Field-Dependence of Interface Trap Generation, and
Hole Trapping Effects and Relaxation”, (Invited Paper, Special Issue on Modeling of Nanoscale
Transistors) IEEE Transaction of
Electron Devices (T-ED), 54(9), pp. 2143-2154, 2007. PDF
9.
A. E. Islam, H. Kufluoglu, D. Varghese, and M. A. Alam, “A
Critical Analysis of Short-term Negative Bias Temperature Instability
Measurements: Explaining the effect of time-zero
delay for On-the-fly Measurements”, Applied Physics Letter, 90 (083505),
2007. PDF
10. A. E.
Islam, A. Haque,
“Accumulation gate capacitance of MOS devices with ultra-thin high-K
gate dielectrics: Modeling and Characterization”, IEEE Transaction of
Electron Devices (T-ED), 53(6), pp. 1364-1372, 2006. PDF
Conference
11.
A. E. Islam, S. Mahapatra, S. Deora, V. D. Maheta, and M. A. Alam,
“On The Differences Between Ultra-fast NBTI Experiments and
Reaction-Diffusion Theory”, International
Electron Devices Meeting (IEDM) 2009, session 31.2.
12.
A. E. Islam and M. A. Alam, “Self-Optimizing Defect
Generation for Advanced CMOS Substrates”, International Integrated
Reliability Workshop (IIRW) 2009, session ….
13. M. A. Alam and A. E. Islam, “On the Reliability of and Self-Compensation
in Strained Transistors”, (Invited) International Conference on Solid State Devices and Materials (SSDM) 2009, session B-9-1.
14. M. Masuduzzaman, A. E. Islam, and M. A.
Alam, “Physics and Mechanics of Dielectric Trap Profiling by
Multi-frequency Charge Pumping Method”, to appear in International
Reliability Physics Symposium, April 2009.
15. A. E.
Islam, J. H. Lee, W. H. Wu, A. Oates and M. A. Alam, “Universality
of Interface Trap Generation and Its Impact on ID Degradation in
Strained/Unstrained PMOS Devices During NBTI Stress”, Proceedings of International Electron Devices Meeting
(IEDM) 2008, pp. 107-110. PDF
Breeze Presentation
16. A. E.
Islam, V. D. Maheta, H. Das,
S. Mahapatra, and M. A. Alam, “Mobility Degradation Due to Interface
Traps in Plasma Oxinitride PMOS Devices”, Proceedings of International Reliability Physics Symposium
(IRPS) 2008, pp. 87-96. PDF Breeze Presentation
17. J. H. Lee, W. H. Wu, A. E. Islam, M. A.
Alam and A. S. Oates, “Separation method of hole trapping and
interface trap generation and their roles in NBTI Reaction-Diffusion model”, Proceedings of International
Reliability Physics Symposium (IRPS) 2008, pp. 745-746. PDF
18.
A. E. Islam, E. N. Kumar, H. Das, S. Purawat, V. D. Maheta, H.
Aono, E. Murakami, S. Mahapatra, and M. A. Alam, “Theory and Practice
of On-the-fly and Ultra-fast VT Measurements for NBTI
Degradation: Challenges and Opportunities”, Proceedings of
International Electron Devices Meeting (IEDM) 2007, pp. 805-808. (Nominated
for Roger A. Haken Best Student
Paper Award) PDF
19.
E. N.
Kumar, V. D. Maheta, S. Purawat, S. Rani, A. E. Islam, K. Ahmed, M. A. Alam
and S. Mahapatra, “Material Dependence of NBTI Physical Mechanism in
Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast
On-The-Fly (UF-OTF) IDLIN Technique”, Proceedings of International
Electron Devices Meeting (IEDM) 2007, pp. 809-812. PDF
20.
Kunhyuk
Kang, Keejong Kim, Ahmad E. Islam,
Muhammad A. Alam, and Kaushik Roy, “Characterization and Estimation of Circuit
Reliability Degradation under NBTI using
On-Line IDDQ Measurement”, Proceedings of 44th Design Automation Conference, 20.1, June 2007. (Nominated
for Best Paper Award) PDF
21. S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D.
Saha and M. A. Alam, “On the Physical Mechanism of NBTI in Silicon
Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions
Resolve the Interface Trap Generation versus Hole Trapping
Controversy?”, Proceedings of
International Reliability Physics Symposium (IRPS) 2007, pp. 1-9. PDF
22. A. E.
Islam,
G. Gupta, S. Mahapatra, A. T.
Krishnan, K. Ahmed, F. Nouri, A. S. Oates, and M. A. Alam, “Gate
Leakage vs. NBTI for Plasma Nitrided Oxides: Characterization, Physical
Principles and Optimization”, Proceedings of International Electron
Devices Meeting (IEDM) 2006, pp. 12.4.1. PDF
Patent
23. A. E. Islam, and M. A. Alam, “Field
Effect Transistors Having Negligible Drain Current Degradation”,
Patent Pending (Submitted: March 5, 2008).
Undergraduate Works
(Journals & Conferences):
24. A.E. Islam, S.M.J. Al-Kadry, and M.W.K. Nomani, "Designing a
Spectrum Analyzer Using Parallel Port Interfacing", Bangladesh Journal
of Information & Communication Technology,
vol. 9, 2005. PDF
25. A.E. Islam, S.M.J. Al-Kadry, and A.N.M. Zainuddin, "A Novel
Algorithm for using a Microcontroller in Controlling Adjustable Speed
Drive", Bangladesh Journal of
Information & Communication Technology, vol. 8, 2004. PDF
26. A. E.
Islam,
K.M. Rahman, M.A. Choudhury, S.M.J. Al-Kadry, A.M. Rizwan, M.M. Islam, and S.M.M. Rahman, “Low Cost Implementation
of High Resolution PWM Scheme for ASD”, ICECE, Dhaka, Bangladesh,
December 28-30, 2004. PDF
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Simulation Tool
27.
“Device
Reliability Tool on nanoHUB”
§
Contributors:
Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad Ashraful Alam
§
Analyzes
MOS device reliability based on Negative Bias Temperature Instability
(NBTI).
Research Presentations
IEEE EDS (Bangladesh Chapter) Student Seminar,
January 2009, United International University & East West University,
Bangladesh
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Interfacial
Defects: History, Modeling, Effects & Optimization
NCN Student Symposium, Summer 2008, Purdue
University, Indiana, USA
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Trap
Formation in CMOS Devices: Characterization, Modeling & Optimization
Birck Nanotechnology Center Annual Review 2008,
April 14, Purdue University, Indiana, USA
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Characterization
and Modeling of Trap Generation: A Primer on “Why and How the
Transistors Degrade” PDF
SRC GRC ICSS Annual Review 2007, October 23-24,
UMass-Amherst, Massachusetts, USA
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Integrated
Framework for Reliability and Process-Variation Aware Design Methodology for VLSI Circuits
SRC GRC ICSS Annual Review 2006, October 6-8,
UIUC, Illinois, USA
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Modeling
of Negative Bias Temperature Instability and Hot Carrier Injection PDF
NCN Annual Review, June 20-22, Purdue
University, Indiana, USA
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Computational
Modeling of Negative Bias Temperature Instability (NBTI) for
Reliability-aware VLSI Design PDF
Advanced Energy, NCSU, North Carolina, USA
(20-24 May 2003)
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FEC 2003
project’s final report.
Applied Power Electronic Conference (APEC)
2003, Florida, USA (9th Feb 2003)
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Progress
report of the FEC 2003 project.
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