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Name |
Ahmad Ehteshamul Islam |
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Contact |
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Educational Qualifications |
Purdue University, West Lafayette, IN, USA § Direct PhD Student (August 2005- Present): CGPA: 4.00 / 4.00
Bangladesh University of Engineering &Technology, Dhaka, Bangladesh § B. Sc in Electrical & Electronic Engineering (February 2004);
CGPA: 3.97 / 4.00 Notre Dame College, Dhaka, Bangladesh § HSC (Equivalent to A level) (September 1997); Marks Obtained: 89.2% Blue Bird High School, Sylhet, Bangladesh §
SSC (Equivalent to O level)
(August 1995); Marks Obtained: 85% |
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Academic Awards/ Honors Received |
§ IEEE Electron Device Society PhD Fellowship (2008) Related news at ECE@Purdue, IEEE Newsletter, IEEE EDS Webpage, Weekly Economics, EDS Newsletter (Jan 2009) § Kintar-Ul-Haque Gold Medal (2005) § Dean’s List (1999-2003), EEE, BUET. § University Merit Scholarship (1999-2003). § M. Islam Memorial Scholarship (August 2003). § A. Hossain Fellowship (February 2002). § M.A. Khaleq & A.N.H. Bari Charitable Trust Fund (February 2002). §
§ Junior scholarship in Talent pool (1992). |
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Research Interest(s) |
q Properties of Amorphous Materials and their
interfaces q Negative Bias Temperature Instability (NBTI) in MOS
structures q Effect of Uniaxial and Biaxial Strain on Interfaces q Interfaces involving oxides in FeRAM and MRAM q Characterization and Modeling of Reliability for MOS
Devices q Quantum confinement and leakage of carriers in
nanoscale MOS structures. |
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Courses Taken |
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Project Involvement |
Nanoelectric Research Initiative (NRI) (Jan 2007 - Present) § Modeling and Implication of Trap Generation in Nanoscale Structures § Designing Variation-Resilient Transistor and Circuits Global Research Collaboration (SRC GRC) (Aug 2005 – Aug 2007) § Integrated Framework for Reliability and Process-Variation Aware Design Methodology for VLSI Circuits |
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1 KW Inverter System for Unity PF Load (April 2004 - August 2005 ) § Worked as Faculty Co-supervisor for the EEE, BUET Team. www.energychallenge.org Novel Low-Cost three-phase Induction Motor ASD fed from a single-phase AC supply (May 2002 – August 2003) § Worked as Student Team Leader of the EEE, BUET team. §
Received the “Honorable
Mention” award in FEC 2003 competition. |
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Computer Skill(s) |
Environment: Windows, Dos, Unix Language: C/C++, Java, Assembly, Fortran, HTML, VHDL, Python Simulation Tools: Orcad, Matlab |
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Professional Activities |
Reviewer for: IEEE
Transactions on Electron Devices (In golden list of reviewers: 2008) IEEE
Electron Device Letters (In golden list of reviewers: 2008) IEEE
Transactions on Device and Materials Reliability (2007-) Elsevier:
Solid State Electronics (2008-) Research Assistant, Purdue University Aug
2005-Present Lecturer, Department of EEE, BUET Apr
2004-Jul 2005 Technical Committee, International
Conference on Electrical and Computer Engineering (ICECE) 2004 |
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Extra-Curricular Activities |
Bangladeshi Student Association (BDSA) @ Purdue University § Vice-President: 2008-Present § General Secretary: 2007-2008 § Treasurer: 2006-2007 NCN@Purdue Student Leadership Council § Member: 2007-present ICECE 2004 Conference, § Volunteer: Technical Committee |
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Publications(s) |
Journals 1.
S.
Mahapatra, V. D. Maheta, A. E. Islam,
and M. A. Alam, “Isolation of NBTI Stress
Generated Interface Trap and Hole-Trapping Components in PNO
p-MOSFETs”, to appear in IEEE Transaction of Electron Devices (T-ED),
Feb 2009. 2.
M. Masuduzzaman, A. E. Islam,
and M. A. Alam, “Exploring the Capability of Multi-Frequency Charge
Pumping in Resolving Location and Energy Levels of Traps within
Dielectric”, IEEE Transaction of Electron Devices (T-ED), 55(12), pp.
3421-3431, 2008. PDF 3. A. E. Islam, and M. A. Alam, “On the Possibility of Degradation-Free Field Effect Transistors”, Applied Physics Letter, 92 (173504), 2008. PDF 4. A. E. Islam, G. Gupta, K. Ahmed, S. Mahapatra, M. A. Alam, “Optimization of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and Analytical Models”, IEEE Transaction of Electron Devices (T-ED), 55(5), pp. 1143-1152, 2008. PDF 5. A. E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra, and M. A. Alam, “Recent Issues in Negative Bias Temperature Instability: Initial Degradation, Field-Dependence of Interface Trap Generation, and Hole Trapping Effects and Relaxation”, (Invited Paper, Special Issue on Modeling of Nanoscale Transistors) IEEE Transaction of Electron Devices (T-ED), 54(9), pp. 2143-2154, 2007. PDF 6. A. E. Islam, H. Kufluoglu, D. Varghese, and M. A. Alam, “A Critical Analysis of Short-term Negative Bias Temperature Instability Measurements: Explaining the effect of time-zero delay for On-the-fly Measurements”, Applied Physics Letter, 90 (083505), 2007. PDF 7. A. E. Islam, A. Haque, “Accumulation gate capacitance of MOS devices with ultra-thin high-K gate dielectrics: Modeling and Characterization”, IEEE Transaction of Electron Devices (T-ED), 53(6), pp. 1364-1372, 2006. PDF Conferences 8. M. Masuduzzaman, A. E. Islam, and M. A. Alam, “Physics
and Mechanics of Dielectric Trap Profiling by Multi-frequency Charge Pumping
Method”, to appear in International Reliability Physics Symposium,
April 2009. 9. A. E. Islam, J. H. Lee, W. H. Wu, A.
Oates and M. A. Alam, “Universality of Interface Trap Generation and
Its Impact on ID Degradation in Strained/Unstrained PMOS Devices
During NBTI Stress”, Proceedings
of International Electron Devices Meeting (IEDM) 2008, pp. 107-110. PDF
Breeze Presentation 10. A. E. Islam, V. D. Maheta, H. Das, S. Mahapatra, and M. A. Alam, “Mobility
Degradation Due to Interface Traps in Plasma Oxinitride PMOS Devices”, Proceedings of International
Reliability Physics Symposium (IRPS) 2008, pp. 87-96. PDF Breeze Presentation 11. J. H. Lee, W. H. Wu, A. E. Islam, M. A. Alam and A. S. Oates,
“Separation method of hole trapping and interface trap generation and
their roles in NBTI Reaction-Diffusion model”, Proceedings of International Reliability Physics
Symposium (IRPS) 2008, pp. 745-746. PDF 12.
A. E. Islam, E. N. Kumar, H. Das, S.
Purawat, V. D. Maheta, H. Aono, E. Murakami, S. Mahapatra, and M. A. Alam,
“Theory and Practice of On-the-fly and Ultra-fast VT
Measurements for NBTI Degradation: Challenges and Opportunities”,
Proceedings of International Electron Devices Meeting (IEDM) 2007, pp.
805-808. (Nominated for Roger A. Haken Best Student Paper Award) PDF 13.
E. N. Kumar, V. D. Maheta, 14.
Kunhyuk Kang, Keejong Kim, Ahmad E. Islam, Muhammad A. Alam, and
Kaushik Roy, “Characterization
and Estimation of Circuit Reliability Degradation under NBTI using
On-Line IDDQ Measurement”, Proceedings of 44th Design Automation Conference, 20.1, June 2007. (Nominated for Best
Paper Award) PDF 15.
S. Mahapatra, K. Ahmed, D.
Varghese, A. E. Islam, G. Gupta,
L. Madhav, D. Saha and M. A. Alam, “On the Physical Mechanism of NBTI
in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing
Conditions Resolve the Interface Trap Generation versus Hole Trapping
Controversy?”, Proceedings of International
Reliability Physics Symposium (IRPS) 2007, pp. 1-9. PDF 16. A. E. Islam, G. Gupta, S. Mahapatra, A. T. Krishnan, K. Ahmed, F. Nouri, A. S. Oates, and M. A. Alam, “Gate Leakage vs. NBTI for Plasma Nitrided Oxides: Characterization, Physical Principles and Optimization”, Proceedings of International Electron Devices Meeting (IEDM) 2006, pp. 12.4.1. PDF Patent 17. A. E. Islam, and M. A. Alam, “Field Effect Transistors Having Negligible Drain Current Degradation”, Patent Pending (Submitted: March 5, 2008). Undergraduate Works (Journals & Conferences): 18. A.E. Islam, S.M.J. Al-Kadry, and M.W.K.
Nomani, "Designing a Spectrum Analyzer Using 19. A.E. Islam, S.M.J. Al-Kadry, and A.N.M.
Zainuddin, "A Novel Algorithm for using a Microcontroller in 20. A. E. Islam, K.M. Rahman, M.A. Choudhury, S.M.J. Al-Kadry, A.M. Rizwan, M.M. Islam, and S.M.M. Rahman, “Low Cost Implementation of High Resolution PWM Scheme for ASD”, ICECE, Dhaka, Bangladesh, December 28-30, 2004. PDF Conference Link |
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Simulation Tool(s) |
“Device Reliability Tool on nanoHUB” § Contributors: Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad Ashraful Alam § Analyzes MOS device reliability based on Negative Bias Temperature Instability (NBTI). |
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Research Presentation(s) |
NCN Student Symposium, Summer 2008, Purdue University, Indiana, USA § Trap Formation in CMOS Devices: Characterization, Modeling & Optimization Birck Nanotechnology Center Annual Review 2008, Purdue University, Indiana, USA §
Characterization and Modeling of
Trap Generation: A Primer on “Why and How the Transistors
Degrade” PDF SRC GRC ICSS Annual Review 2007, UMass-Amherst, Massachusetts, USA §
Integrated Framework for
Reliability and Process-Variation Aware Design Methodology for VLSI Circuits SRC GRC ICSS Annual Review 2006, UIUC, Illinois, USA §
Modeling of Negative Bias
Temperature Instability and Hot Carrier Injection PDF NCN Annual Review 2006, Purdue University, Indiana, USA §
Computational Modeling of
Negative Bias Temperature Instability (NBTI) for Reliability-aware VLSI
Design PDF Advanced Energy, NCSU, North Carolina, USA (May 2003) § FEC 2003 project’s final report. Applied Power Electronic Conference (APEC) 2003, Florida, USA § Progress report of the FEC 2003 project. |
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Reference(s) |
Muhammad Ashraful Alam Professor, Department of ECE, Email: alam@purdue.edu Web: http://dynamo.ecn.purdue.edu/~alam/ Souvik Mahapatra Professor, Department of EE, IIT-Bombay Email: souvik@ee.iitb.ac.in Web: http://www.ee.iitb.ac.in/wiki/faculty/souvik Mark S. Lundstrom Professor, Department of ECE, Email: lundstro@purdue.edu Web: http://cobweb.ecn.purdue.edu/~lundstro/ Anisul Haque Professor, Department of EEE, Email: ahaque@ewubd.edu Web: http://www.ewubd.edu/ewu/showDocument.php?documentid=1116 |