HOMEBIOSTUDENTSRESEARCHPUBLICATIONSCONTACT USSPONSORSNEWS

           

 

 

 

 

           

 

          

  Reverse Chronological Order (Total Citation =10048, as of Feb. 2017 on Google Scholar)

75. On the Potential of 2D Layered Materials as Diffusion Barriers for Cu Interconnect Technology

C. -L. Lo, M. Catalano, K.K.H. Smithe, L. Wang, E. Pop, M.J. Kim, Z. Chen

TECHCON, Sept. 10-12, Austin, TX (2017)

 

74. Molecular Doping of Transition Metal Dichalcogenides using Metal Phythalocyanines

S. N. Zhang, C. J. Benjamin, Z. Chen

IEEE Device Research Conference Digest (2017)

 

73. Gate Tunable 2D WSe2 Esaki Diode by SiNx Doping

C. -S. Pang, H. Ilatikhameneh, Z. Chen

IEEE Device Research Conference Digest (2017)

 

72. BEOL Compatible 2D Layered Materials as Ultra-Thin Diffusion Barriers for Cu Interconnect Technology

C. -L. Lo, S. Zhang, T. Shen, J. Appenzeller, Z. Chen

IEEE Device Research Conference Digest (2017)

 

71. Atomically Thin Diffusion Barriers for Ultra-Scaled Cu Interconnects Implemented by 2D Materials

C. -L. Lo, K.K.H. Smithe, R. Mehta, S. Chugh, E. Pop, Z. Chen

IEEE International Reliability Physics Symposium, April 2-6, Montery, CA (2017)

 

70. Transfer-free multi-layer graphene as a diffusion barrier

R. Mehta, S. Chugh, Z. Chen

Nanoscale, 9, 1827 (2017)

 

69. Resist-free fabricated carbon nanotube field-effect transistors with high-quality atomic-layer-deposited platinum contacts

A.J.M. Mackus, N.F.W. Thissen, J.J.L. Mulders, P.H.F. Trompenaars, Z. Chen, W.M.M. Kessels, A.A. Bol

APL, 110, 013101 (2017)

 

68. Experimental demonstration of nanomagnet networks as hardware for Ising computing

P. Debashis, R. Faria, K.Y. Camsari, J. Appenzeller, S. Datta, Z. Chen

IEEE IEDM Technical Digest, paper 34.3 (2016)

 

67. Optical relaxation time enhancement in graphene-passivated metal films

S. Chugh, R. Mehta, M. Man, Z. Chen

Scientific Reports, 6, 30519 (2016)

 

66. Reduction in surface scattering in copper by graphene deposition

S. Chugh, R. Mehta, Z. Chen

TECHCON, Sept. 11-13, Austin, TX (2016)

 

65. Configurable electrostatically doped high performance bilayer graphene tunnel FET

F. Chen, H. Ilatikhameneh, G. Klimeck, Z. Chen, R. Rahman

IEEE J. EDS, 4, 124 (2016)

 

64. Bandgap engineering in 2D layered materials

T. Chu, Z. Chen

IEEE IEDM Technical Digest, p. 707 (2015)

 

63. Electrically tunable bandgaps in bilayer MoS2

T. Chu, H. Ilatikhameneh, G. Klimeck, R. Rahman, Z. Chen

Nano Lett., 15, 8000 (2015)

 

62. Spin-torque switching of a nano-magnet using giant spin Hall effect

A.V. Penumatcha, S.R. Das, Z. Chen, J. Appenzeller

AIP Advances, 5, 107144 (2015)

 

61. Impact of scaling on the dipolar coupling in magnet-insulator-magnet structures

A.V. Penumatcha, C.-C. Lin, V. Q. Diep, S. Datta, J. Appenzeller, Z. Chen

IEEE Trans. Magnetics, 52, 3400207 (2015)

 

60. Transport properties of bilayer graphene field effect transistor

F. Chen, H. Ilatikhameneh, T. Chu, R. Rahman, J. Appenzeller, Z. Chen, G. Klimeck

TECHCON, p. 12.2, Sept. 20-22, Austin, TX (2015)

 

59. Achieving large transport bandgaps in bilyaer graphene

T. Chu, Z. Chen

Nano Research, 8, 3228 (2015)

 

58. Achieving a higher on/off ratio in bilayer graphene FET - strain engineering

F. Chen, H. Ilatikhameneh, T. Chu, J. Appenzeller, Z. Chen, G. Klimeck, R. Rahman

SISPAD, p. 177-181, Sept. 9-11, Washington, DC (2015)

 

57. Direct PECVD growth of graphene at low temperature on SiO2

S. Chugh, R. Mehta, Z. Chen

TECHCON, p. 12.1, Sept. 20-22, Austin, TX (2015)

 

56. Graphene-encapsulated copper nanowires for improved thermal management of interconnects

R. Mehta, S. Chugh, Z. Chen

InterPACK, p. 48359, July 6-9, San Francisco, CA (2015)

 

55. Comparison of graphene growth on arbitrary non-catalytic substrates using low-temperature PECVD

S. Chugh, R. Mehta, N. Lu, F.D. Dios, M.J. Kim, Z. Chen

Carbon, 93, 393 (2015)

 

54. Enhanced electrical and thermal conduction in graphene - encapsulated copper nanowires

R. Mehta, S. Chugh, Z. Chen

Nano. Lett., 15, 2024 (2015)

 

53. Ultra - dark graphene stack metamaterials

S. Chugh, M. Man, Z. Chen, K. Webb

Appl. Phys. Lett., 106, 061102 (2015)

 

52. PECVD graphene - a novel thermal interface and barrier material for ultra-scaled copper interconnects

R. Mehta, S. Chugh, Z. Chen

TECHCON, p.3.1, Sept. 7-9, Austin, TX (2014)

 

51. Ionic gated WSe2 FETs: towards transparent Schottky barriers

A. Prakash, S. Das, R. Mehta, Z. Chen, J. Appenzeller

IEEE Device Research Conference, p. 129, June 22-25, Santa Barbara, CA (2014)

 

50. Carbon nanotube for high - performance logic

Z. Chen, H.-S. Wong, S. Mitra, A. Bol, L. Peng, G. Hills, N. Thissen

MRS Bulletin, 39, 719 (2014)

 

49. Graphene stacks as the darkest metamaterial

S. Chugh, M. Man, Z. Chen, K. Webb

Conference on Lasers and Electro-Optics: Science and Innovation, p. SM3H-3, June 8-13, San Jose, CA (2014)

 

48. Self-aligned edge contacts for 2D layered systems

T. Chu, Z. Chen

The 58th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication,

May 27-30, Washington, DC (2014)

 

47. Semiconducting bilayer graphene for device applications

T. Chu, Y. Zhao, Z. Chen

TechConnect World Conference and Expo, June 16-18, National Harbor, MD (2014)

 

46. Improvement of spin transfer torque in asymmetric graphene devices

C.-C. Lin, Y. Gao, A.V. Penumatcha, V.Q. Diep, J. Appenzeller, Z. Chen

ACS Nano, 8, 3807 (2014)

 

45. Understanding the electrical impact of edge contacts in few-layer graphene

T. Chu, Z. Chen

ACS Nano, 8, 3584 (2014) ACS Nano Podcast Episode 81

 

44. Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field

C.-C. Lin, A.V. Penumatcha, Y. Gao, V.Q. Diep, J. Appenzeller, Z. Chen

Nano Letters, 13, 5177 (2013)

 

43. Optimized spin relaxation length in few layer graphene at room temperature

Y. Gao, Y.J. Kubo, C.-C. Lin, Z. Chen, and J. Appenzeller

IEEE IEDM, paper 4.4.1, p. 80 (2012)

 

42. Graphene nano-mesh contacts and its transport properties

T. Chu, Z. Chen

IEEE Device Research Conference Digest, 185 (2012)

 

41. Properties of metal-graphene contacts

J. Knoch, Z. Chen, J. Appenzeller

IEEE Transactions on Nanotechnology, 11, 513 (2012)

 

40. Channel-length dependent transport behaviors of graphene field-effect transistors

S.-J. Han, Z. Chen, A. A. Bol, and Y. Sun

IEEE Electron Device Letters, 32, 812 (2011)

 

39. Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates

S.-J. Han, J. Chang, A. D. Franklin, A. A. Bol, R. Loesing, D. Guo, G. S. Tulevski, W. Haensch and Z. Chen

IEEE IEDM Technical Digest, 206  (2010)

 

38. Extremely scaled carbon nanotube transistors

Aaron D. Franklin and Zhihong Chen

Nature Nanotechnology, 5, 858 (2010)

 

37. Channel and contact length scaling effects in carbon nanotube transistors

Aaron D. Franklin, Ageeth Bol and Zhihong Chen

IEEE Device Research Conference Digest, 275 (2010)

 

36. Improve variability in carbon nanotube FETs by scaling

Yanning Sun, George Tulevski, Shu-jen Han, Wilfried Haensch and Zhihong Chen

IEEE Device Research Conference Digest, 283 (2010)

 

35. Study of channel length scaling in large-scale graphene FETs

Shu-jen Han, Yanning, Sun, Ageeth Bol, Wilfried Haensch, and Zhihong Chen

Digest of  symposium on VLSI technology, 231 (2010)

 

34. Decoupling graphene from SiC(0001) via oxidation

S. Oida, F.R. McFeely, J.B. Hannon, R.M. Tromp, M. Copel, Z. Chen, Y. Sun, D.B. Farmer, J. Yurkas

Phys. Rev. B, 82, 041411 (2010)

 

33. Current scaling in aligned carbon nanotube array transistors with local bottom gating

Aaron D. Franklin, Albert Lin, Philip Wong, and Zhihong Chen

IEEE Electron Device Letters, 31, 644 (2010)

 

32. Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

C. Dimitrakopoulos, Y.-M. Lin, A. Grill, D.B. Farmer, M. Freitag, Y. Sun, S.-J. Han, Z. Chen, K. A. Jenkins, Y. Zhu, Z. Liu, T.J.  McArdle, J.A. Ott, R. Wisnieff, and Ph.  Avouris

J. Vac. Sci. & Tech. B, 28, 985 (2010)

 

31. Can carbon nanotube transistors be scaled without performance degradation?

Aaron D. Franklin, George Tulevski, James B. Hannon, and Zhihong Chen

IEEE IEDM Technical Digest, p. 561-564 (2009)

 

30. Graphene nano-structures for device applications

Joerg Appenzeller, Yang Sui, Zhihong Chen

Digest of symposium on VLSI technology, 124, invited paper (2009)

 

29. Gate modulation of graphene contacts - on the scaling of graphene FETs

Zhihong Chen, Joerg Appenzeller

Digest of symposium on VLSI technology, 128 (2009)

 

28.  Energy dissipation in graphene field-effect transistors

M. Freitag, M.Steiner, Y. Martin, V. Perebeinos, Z. Chen, J.C. Tsang, Ph. Avouris

Nano Lett. 9, 1883 (2009)

 

27. Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices

Zhihong Chen, Joerg Appenzeller

IEEE IEDM Technical Digest, p. 509-512 (2008)

 

26. Electrical observation of subband formation in graphene nanoribbons

Yu-Ming Lin, Vasili Perebeinos, Zhihong Chen, Phaedon Avouris

Phys. Rev. B, Vol. 78, 161409 (2008)

 

25. The first externally assembled gate-all-around carbon nanotube field-effect transistor

Zhihong Chen, Damon Farmer, Sheng Xu, Roy Gordon, Phaedon Avouris, Joerg Appenzeller

IEEE Electron Device Letters, Vol. 29, 183 (2008)

 

24. A novel strategy for diameter-selective separation and functionalization of single-wall carbon nanotubes

R.M. Tromp, A. Afzali, M. Freitag, D. Mitzi, Z. Chen

Nano Letters, Vol. 8, 469 (2008)

 

23. Chemically assisted directed assembly of carbon nanotubes for the fabrication of large-scale device arrays

George S. Tulevski, James Hannon, Ali Afzali, Zhihong Chen, Phaedon Avouris, and Cherie R. Kagan

J. Am. Chem. Soc., Vol. 129, 11964-11968 (2007)

 

22. Carbon based electronics

Phaedon Avouris, Zhihong Chen, Vasili Perebeinos

Nature Nanotechnology,Vol. 2 605-615 (2007)

 

21. Graphene nano-ribbon electronics

Zhihong Chen, Yu-Ming Lin, Michael J. Rooks, Phaedon Avouris

Physica E:Low-dimensional Systems and Nanostructures, Vol. 40, 228 (2007)

 

20. Electrical transport and 1/f noise in semiconducting carbon nanotube

Yu-Ming Lin, Joerg Appenzeller, Zhihong Chen, Phaedon Avouris

Physica E: Low-dimensional Systems and Nanostructures, Vol. 37, 72 (2007)

 

19. Decoupling current and noise in injection controlled, ballistic carbon nanotube devices

Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch, Zhihong Chen, and Phaedon Avouris

IEEE Transactions on Nanotechnology, Vol. 6, 368 (2007)

 

18. Gate work function engineering for nano-material based circuits

Zhihong Chen, Joerg Appenzeller, Paul M. Solomon, Yu-Ming Lin, Phaedon Avouris

IEEE International Solid-State Circuit Conference, Solicited paper, 68 (2007)

 

17. Charge dynamics in transparent single-walled carbon nanotube films from optical transmission measurements

F. Borondics, K. Kamaras, M. Nikolou, D.B. Tanner, Z. Chen, A.G. Rinzler

Physical Review B, Vol. 74, 045431 (2006)

 

16. Reduction of 1/f noise in carbon nanotube devices

Yu-Ming Lin, Joerg Appenzeller, Chang C. Tsuei, Zhihong Chen, Phaedon Avouris

IEEE Device Research Conference Digest, 279 (2006)

 

15. High performance carbon nanotube ring oscillator

Zhihong Chen, Joerg Appenzeller, Paul M. Solomon, Yu-Ming Lin, Phaedon Avouris

IEEE Device Research Conference Digest, 171 (2006)

 

14. Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes

Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch, Zhihong Chen, Phaedon Avouris

Nano Letters, Vol. 6, 930 (2006)

 

13. An integrated logic circuit assembled on a single carbon nanotube

Zhihong Chen, Joerg Appenzeller, Yu-Ming Lin, Jennifer Sippel-Oakley, Andrew G. Rinzler, Jinyao Tang, Shalom J. Wind, Paul M. Solomon, Phaedon Avouris

Science, Vol. 311, 1735 (2006)

 

12. Classical magnetoresistance in a curved wire

Selman Hershfield, Zhihong Chen

J. Appl. Phys. Vol. 97, 10M105 (2005)

 

11. Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch, Zhihong Chen, Phaedon Avouris

IEEE Transactions on Electron Devices, Vol. 52, 2568 (2005)

 

10. High performance dual-gate carbon nanotube FETs with 40-nm gate length

Yu-Ming Lin, Joerg Appenzeller, Zhihong Chen, Zhi-Gang Chen, Hui-Ming Cheng, Phaedon Avouris

IEEE Electron Device Letters, Vol. 26, 823 (2005)

 

9. Impact of the nanotube diameter on the performance of CNFETs

Zhihong Chen, Joerg Appenzeller, Joachim Knoch, Yu-Ming Lin, Phaedon Avouris

IEEE Device Research Conference Digest, 237 (2005)

 

8. The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors

Zhihong Chen, Joerg Appenzeller, Joachim Knoch, Yu-Ming Lin, Phaedon Avouris

Nano Letters, Vol.5, 1497 (2005)

 

7. An extended model for carbon nanotube field-effect transistors

J. Knoch, S. Mantl, Y.-M. Lin, Z. Chen, Ph. Avouris, J. Appenzeller

IEEE Device Research Conference Digest, 135 (2004)

 

6. Wide range optical studies on transparent SWNT films

F. Borondics, K. Kamaras, Z. Chen, A.G. Rinzler, M. Nikolou, D.B. Tanner

Proceedings of the XVIII Winter School on the Electronic Properties of Novel Materials, American Institute of Physics, NY (2004)

 

5. Metallic/semiconducting nanotube separation and ultra-thin, transparent nanotube films

Z. Chen, Z. C. Wu, J. Sippel and A. G. Rinzler

Proceedings of the XVIII Winter School on the Electronic Properties of

Novel Electronic Materials, American Institute of Physics, NY (2004)

 

4. Transparent, conductive carbon nanotube films

Zhuangchun Wu, Zhihong Chen*, Xu Du, Jonathan M. Logan, Jennifer Sippel,

Maria Nikolou, Katalin Kamaras, John R. Reynolds, David B. Tanner,

Arthur F. Hebard, Andrew G. Rinzler (* First two authors contributed equally to the manuscript)

Science, Vol. 305, 1273 (2004)

 

3. Single wall carbon nanotubes for p-type ohmic contacts to GaN light-emitting diodes

K. Lee, Z. Wu, Z. Chen, F. Ren, S.J. Pearton, A.G. Rinzler

Nano Letters, Vol.4, 911, (2004)

 

2. Bulk separative enrichment in metallic or semiconducting single-walled carbon nanotubes

Z. Chen, X. Du, M. Du, D. Rancken, H. Cheng, A.G. Rinzler

Nano Letters, Vol.3, 1245 (2003)

 

1. Length sorting cut single wall carbon nanotubes by high performance liquid chromatography

E. Farkas, M.E. Anderson, Z. Chen, A.G. Rinzler

Chemical Physics Letters 363, 111 (2002)

 

66. Reduction in surface scattering in copper by graphene deposition

S. Chugh, R. Mehta, Z. Chen

TECHCON, Sept. 11-13, Austin, TX (2016)