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Shaikh Shahid Ahmed, Ph.D.
Postdoctoral Research Associate
School of Electrical and Computer Engineering
Purdue University
465 Northwestern Ave.
West Lafayette, Indiana 47907-2035
E-mail:
ssahmed@purdue.edu
Phone: (765) 494 9034, (765) 409 3653
Fax: (765) 494 6441
Post-Doctoral Research Associate (Feb, 2005 -)
School of Electrical and Computer Engineering and
Network for Computational Nanotechnology
Purdue University, West Lafayette, Indiana, USA
Ph.D. in Electrical Engineering (2003 - Jan., 2005)
Department of Electrical Engineering, Arizona State University, Tempe, Arizona, USA.
Dissertation title: Quantum and Coulomb Effects in Nanoscale Devices.
M.S. in Electrical Engineering (2001- 2003)
Department of Electrical Engineering, Arizona State University, Tempe, Arizona, USA.
Thesis title: Modeling of Silicon-On-Insulator Devices.
B.S. in Electrical and Electronic Engineering (1993 - 1998)
Bangladesh University of Engineering & Technology (BUET), Dhaka, Bangladesh.
Thesis: Design and simulation of Log-Periodic Yagi-Uda Antennas
The Network for Computational Nanotechnology (NCN) is a multi-university National Science Foundation (NSF) funded initiative with a mission to lead in nanotechnology research and education as well as outreach to students and professionals by offering a set of cyber services (accessible through the NanoHUB portal www.nanohub.org) including interactive online simulation, tutorials, seminars, and online courses packaged using e-learning standards. In the past 12 months, the educational and outreach services were accessed by over 16,200 users. More than 3,500 users performed over 94,000 online simulations. Over 30 applications are available online ranging from toy models to sophisticated simulation engines not yet available commercially which at present encompass electronic structure and transport simulators of molecular, biological, nanomechanical and nanoelectronic systems. All the NCN services are freely open to the public.
As a postdoctoral research associate my accomplishments have mainly emerged through combining my knowledge of fundamental physics of nanoelectronic devices with that of state-of-art high-performance parallel and distributed cluster computing and dynamical web-enabled middlewares within a strong collaborative effort of different reputed universities and research centers.
Please click to open an extended resume
My recent research activities focus mainly in the areas of:
(1) Atomistic electronic structure computation in realistically sized quantum nanostructures and qubit systems for quantum computation.
(2) Development of quantum transport models and methodologies for novel nanostructures including quantum dots, carbon nanotube, carbon ribbon, silicon nanowire, sensors and nanocrystal memories.
(3) Development of novel algorithms and methodologies for solving non-equilibrium Green’s functions for large sparse matrix systems.
(4) Semiconductor devices simulations and characterization. Study of noise in carbon nanotubes and nanoscale MOSFETs.
(i) Developed a full 3D Monte-Carlo particle based simulator .
(ii) Developed a parameter-free quantum field approach for use in conjunction with particle-based simulations. The method is based on a perturbation theory around thermodynamic equilibrium and leads to a quantum field formalism in which the size of an electron depends upon its energy.
(iii) Investigations of the impact of unintentional/discrete doping on the performance of novel SOI devices. Three different but consistent real-space molecular dynamics (MD) schemes have been used in the study: the particle-particle-particle-mesh (P3M) method, the corrected Coulomb approach and the Fast Multipole Method (FMM).
(iv) Modeling and simulation of Schottky Junction Transistors (SJTs). The device was found to offer higher mobility and transconductance than its conventional counterpart.
(v) Study and simulation of ballistic transport in mesoscopic devices using the transfer matrix formalism.
(vi) Worked on developing Hydrodynamic and Extended Drift-Diffusion models to simulate Thin Film Electro-Luminescent (TFEL) devices.
(vii) Investigations of the applicability of the Fast Multipole Method (FMM) and other MD methods to the simulations of non-classical MOSFETs (FinFETs) and Ionic Liquids/Ion Channels.
(viii) HgFET Pseudo-MOSFET (ψ-MOSFET) characterization/measurement/modeling of silicon-on-insulator (SOI) material by Four Dimensions CV Map 92-B System allowing threshold voltage, electron and hole mobility, doping density, oxide charge, interface trap density, etc. to be determined. A SIMOX wafer (p-type, 8.5-14 ohm-cm) was used in this study.
(5) Numerical algorithms, large-scale high-performance parallel cluster and distributed computing and developing community nanotechnology software packages.
(6) analog and digital circuit design.
I have published more than 35 journal and conference articles and 2 (two) book chapters in these and related fields.
Please click to open an extended description of my research activities
Maintained by Shaikh S. Ahmed
Last modified on Sunday November 26, 2006 03:32 AM -0500