Reverse Chronological Order (Total Citation =18,080, as of Jan. 2024 on Google Scholar)
134. Wafer-scale CVD Monolayer WSe2 p-FETs with Record-high 727uA/um Ion and 490uS/um gmax via Hybrid Charge Transfer and Molecular Doping
H.-Y. Lan, R. Tripathi, X. Liu, J. Appenzeller, and Z. Chen
IEEE IEDM Proceeding (2023)
133. A Mobility Study of Monolayer MoS2 on Low-k/High-k Dielectrics
Z. Sun, C. Chen, J.A. Robinson, Z. Chen, J. Appenzeller
IEEE Xplore, Device Research Conference (2023)
132. Taioring Amorphous Boron Nitride for High-Performance 2D Electronics
C.Y. Chen, Z. Sun, R. Torsi, K. Wang, J. Kachian, B. Liu, G.B. Rayner, Z. Chen, J. Appenzeller, Y.-C. Lin, J.A. Robinson
arXiv:2312.09136 (2023)
131. HDesign and Process Co-optimization of Monolayer 2D Transistors via Machine Learning
C.-C. Chiang, H.-Y. Lan, L. Liu, Y.P. Chen, D. Zemlyanov, J. Appenzeller, and Z. Chen
IEEE Transaction on Electron Devices, 70, 5991 (2023)
130. High-performance complementary circuits from two-dimensional MoTe2
J. Cai, Z. Sun, P. Wu, R. Tripathi, H.-Y. Lan, J. Kong, Z. Chen and J. Appenzeller
Nano Letter, 23, 10939 (2023)
129. Dimensional Scaling of Material Functional Properties to meet Back-End-of-Line (BEOL) Challenges
S. Rakheja, Z. Chen, C.-T. Chen
Applied Physics Letters, 123, 030401 (2023)
128. A generalized synthesis method for freestanding multiferroic two-dimensional layered supercell oxide films via a sacrificial buffer layer
J. Shen, B.K. Tsai, K. Xu, A. Shang, J. Barnard, Y. Zhang, R. Tripathi, Z. Chen, X. Zhang, H. Wang
Nano Research, (2023)
127. Self-powered Smart Textile Based on Dynamic Schottky Diode for Human-Machine Interactions
P. Deng, Y. Wang, R. Yang, Z. He, Y. Tan, Z. Chen, J. Liu, T. Li
Advanced Science, 2207298 (2023)
126. Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via TaOx Interfacial Layer
H.-Y. Lan, V. P. Oleshko, A. V. Davydov, J. Appenzeller, Z. Chen
IEEE Tran. Elec. Dev., 70, 2067 (2022)
125. Gate-all-around Nanosheet Transistors Go 2D
Z. Chen
Nature Electronics, 5, 830 (2022)
124. Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via hBN Interfacial Layer and Ta Seeding
H.-Y. Lan, J. Appenzeller, Z. Chen
IEEE International Electron Devices Meeting (IEDM) Proceeding, (2022)
123. Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2
Z. Sun, C.-S. Pang, P. Wu, T.Y.T Hung, M.-Y Li, S. L. Liew, C.-C. Cheng, H. Wang, H.-S. Wong, L.-J. Li, I. Radu, Z. Chen, J. Appenzeller
ACS Nano, 16, 14942 (2022)
122. How to Report and Benchmark Emerging Field-effect Transistors
Z. Cheng, C.-S. Pang, P. Wang, Y. Wu, D. Shahrjerdi, I. Radu, M. Lemme, L.-M. Peng, X. Duan, Z. Chen, J. Appenzeller, S. Koester, E. Pop, A. Franklin, C. Richter
Nature Electronics, 5, 416 (2022)
121. Electric Field Control of Interaction Between Magnons and Quantum Spin Defects
A.B. Solanki, S.I. Bogdanov, A. Rustagi, N.R. Dilley, T. Shen, M. M. Rahman, W. Tong, P. Debashis, Z. Chen, J. Appenzeller, Y.P. Chen, V.M. Shalaev, P. Upadhyaya
Physical Review Research, 4, L012025 (2022)
120. Spin-Orbit Torque Controlled Stochastic Oscillators with Synchronization and Frequency Tunability
P. Debashis, A. K. Maskay, P. Upadhyaya, Z. Chen
Journal of Applied Physics, 131, 123901 (2022)
119. Air-stable P-doping in Record High-performance Monolayer WSe2 Devices
C.-C. Chiang, H.-Y. Lan, C.-S. Pang, J. Appenzeller, Z. Chen
IEEE Elec. Dev. Lett., 43, 319 (2022)
118. Utilizing Valley Spin Hall Effect in Monolayer WSe2 for Designing Low Power Non-Volatile Spintronic Devices and Flip-Flops
K. Cho, X. Liu, Z. Chen, S. Kumar Gupta
IEEE Tran. Elec. Dev., 69, 1667 (2021)
117. Transistor Based on Two-dimensional Materials for Future Integrated Circuits
S. Das, A. Sebastian, E. Pop, C. J. McClellan, A. D. Franklin, T. Grasser, T. Knobloch, Y. Illarionov, A. V. Penumatcha, J. Appenzeller, Z. Chen, W. Zhu, I. Asselberghs, L.-J. Li, U. E. Avci, N. Bhat, T. D. Anthopoulos, R. Singh
Nature Electronics, 4, 786 (2021)
116. Materials for Interconnects
D. Gall, J.J. Cha, Z. Chen, H.-J. Han, C. Hinkle, J.A. Robinson, R. Sundararaman, R. Torsi
MRS Bulletin, 46, 959 (2021)
115. Process Variation Sensitivity of Spin Orbit Torque Perpendicular Nanomagnets in DBNs
H. Pourmeidani, P. Debashis, Z. Chen, R.F. DeMara
IEEE Tran. Mag., 57, 3401508 (2021)
114. Mobility Extraction in 2D Transition Metal Dichalcogenide Devices - On the Importance of Gate Modulated Contact Resistance
C.-S. Pang, R. Zhou, X. Liu, P. Wu, T. Hung, S. Guo, M. Zaghloul, S. Krylyuk, A.V. Davydov, J. Appenzeller, Z. Chen
Small, 17, 2100940 (2021)
113. Steep Slope Carbon Nanotube Tunneling Field-effect Transistor
C.-S. Pang, S.-J. Han, Z. Chen
Carbon, 180, 237 (2021)
112. Memory Applications from 2D Materials
C.-C. Chiang, V. Ostwal, P. Wu, C.-S. Pang, F. Zhang, Z. Chen, and J. Appenzeller
Appl. Phys. Rev., 8, 021306 (2021)
111. Thickness-dependent Study of WS2-FETs with Ultra-scaled Channel Lengths
C.-S. Pang, P. Wu, J. Appenzeller, Z. Chen
IEEE Trans. Elec. Dev., 68, 2123 (2021)
110. Sub-1nm EOT WS2-FET with IDS > 600μA/μm at VDS=1V and SS < 70mV/dec at LG=40nm
C.-S. Pang, P. Wu, J. Appenzeller, Z. Chen
IEEE International Electron Devices Meeting (IEDM) Proceeding (2020)
109. Valley-coupled-spintronic Non-volatile Memories with Compute-in-memory Support
S. Thirumala, Y.-T. Hung, S. Jain, A. Raha, N. Thakuria, V. Raghunathan, A. Raghunathan, Z. Chen, S. Gupta
IEEE Trans. Nano., 19, 635 (2020)
108. Friction Force Reduction for Electrical Terminals Using Graphene Coating
S. Zhang, A. Babak, and Z. Chen
Nanotechnology, 32, 035704 (2020)
107. Opportunities and Challenges of 2D Materials in Back-End-of-Line Interconnect Scaling
C.-L. Lo, B. A. Helfrecht, Y. He, D. M. Guzman, N. Onofrio, S. Zhang, D. Weinstein, A. Strachan, and Z. Chen
Journal of Applied Physics, 128, 080903 (2020) (Editor's Pick)
106. Experimental Observation of Coupled Valley and Spin Hall Effect in p-doped WSe2 Devices
T.Y.T. Hung, A. Rustagi, S. Zhang, P. Upadhyaya, Z. Chen
InfoMat, 2, 968 (2020)
105. Quantum-Classical Spin Hybrids: Leveraging Spintronic Tools for Information Processing Applications
A. Rustagi, A. B. Solanki, S. Kajale, S. Bogdanov, N. R. Dilley, T. Shen, P. Debashis, Z. Chen, J. Appenzeller, Y. Chen, V. M. Shalaev, P. Upadhyaya
Spintronics XIII, 114702B (2020)
104. Atomically Controlled Tunable Doping in High-Performance WSe2 Devices
C.-S. Pang, T. Y. T. Hung, A. Khosravi, R. Addou, Q. Wang, M. J. Kim, R. M. Wallace, Z. Chen
Advanced Electronic Materials, 6, 1901304 (2020)
103. Monolayer WSe2 Induced Giant Enhancement in the Spin Hall Efficiency of Tantalum
P. Debashis, T. Y. T. Hung, Z. Chen
NPJ 2D Materials and Applications, 4:18, (2020)
102. Doping-Induced Schottky-Barrier Realignment for Unipolar and High Hole Current WSe2 Devices With >10^8 On/Off Ratio
C.-S. Pang, T. Y. T. Hung, A. Khosravi, R. Addou, R. M. Wallace, Z. Chen
IEEE Electron Device Letters, 41, 1122 (2020)
101. Hardware Implementation of Bayesian Network Building Blocks with Stochastic Spintronic Devices
P. Debashis, V. Ostwal, R. Faria, S. Datta, J. Appenzeller, Z. Chen
Scientific Reports, 10, 16002 (2020)
100. Correlated Fluctuations in Spin Orbit Torque Coupled Perpendicular Nanomagnets
P. Debashis, R. Faria, K. Y. Camsari, S. Datta, Z. Chen
Physical Review B, 101, 094405 (2020)
99. Dynamically Tunable Thermal Transport in Polycrystalline Graphene by Strain Engineering
Y. Zeng, C.-L. Lo, S. Zhang, Z. Chen, A. Marconnet
Carbon, 158, 63 (2020)
98. From Charge to Spin and Spin to Charge: Stochastic Magnets for Probabilistic Switching
K. Y. Camsari, P. Debashis, V. Ostwal, A. Z. Pervaiz, T. Shen, Z. Chen, S. Datta, J. Appenzeller
Proceedings of the IEEE, 108, 1322 (2020)
97. Valley-Coupled-Spintronic Non-Volatile Memories with Compute-In-Memory Support
S. Thirumala, Y.-T. Hung, S. Jain, A. Raha, N. Thakuria, V. Raghunathan, A. Raghunathan, Z. Chen, S. Gupta
IEEE Trans. Nano. 19, 635 (2019)
96. WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
C.-S. Pang, C.-Y. Chen, T. Ameen, S. Zhang, H. Ilatikhameneh, R. Rahman, G. Klimeck, and Z. Chen
Small, 15, 1902770 (2019)
95. MoS2 for Enhanced Electrical Performance of Ultrathin Copper Films
T. Shen, D. Valencia, Q. Wang, K. Wang, M. Povolotskyi, M. J. Kim, G. Klimeck, Z. Chen, J. Appenzeller
ACS Applied Materials and Interfaces, 11, 28345 (2019)
94. Incorporating Niobium in MoS2 at BEOL-Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance
Rui Zhao, Chun-Li Lo, Fu Zhang, Ram Krishna Ghosh, Theresia Knobloch, Mauricio Terrones, Zhihong Chen, Joshua Robinson
Advanced Materials Interfaces, 1901055 (2019)
93. Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
C.-L. Lo, M. Catalano, A. Khosravi, W. Ge, Y. Ji, D. Y. Zemlyanov, L. Wang, R. Addou, Y. Liu, R. M. Wallace, M. J. Kim, and Z. Chen
Advanced Materials, 31, 1902397 (2019)
92. Graphene Prevents Neurostimulation-induced Platinum Dissolution in Fractal Microelectrodes
H. Park, S. Zhang, A. Steinman, Z. Chen, H. Lee
2D Materials, 6, 035037 (2019)
91. Electrical Annealing and Stochastic Resonance in Low Barrier Perpendicular Nanomagnets for Oscillatory Neural Networks
P. Debashis, P. Upadhyaya and Z. Chen
IEEE Device Research Conference, (2019)
90. WSe2 based Valley-Coupled-Spintronic Devices for Low Power Non-Volatile Memories
S. Thirumala, T. Hung, A. Raha, N. Thakuria, K. Cho, V. Raghunathan, Z. Chen, S. Gupta
IEEE Device Research Conference, (2019)
89. Atomically Thin p-doping Layer and Record High Hole Current on WSe2
T. Y.T. Hung, C.-S. Pang, X. Liu, D. Zemlyanov and Z. Chen
IEEE Device Research Conference, (2019)
88. Replacing TaN/Ta Bilayer with 2D Layered TaS2 Converted from Ta for Interconnects at Sub-5 nm Technology Nodes
C.-L. Lo, H. Li, W. Ge, C. H. Naylor, X. Zhao, Y. Liu, K. Lin and Z. Chen
IEEE IITC / MAM Conference (2019)
87. Graphene Prevents Neurostimulation-induced Corrosion of Pt-based Microelectrodes
H. Park, S. Zhang, A. Steinman, Z. Chen, H. Lee
9th International IEEE/EMBS Conference on Neural Engineering (2019)
86. Direct Observation of Valley Coupled Topological Current in MoS2
T. Y. T. Hung, K. Y. Camsari, S. Zhang, P. Upadhyaya, Z. Chen
Science Advances, 5, eaau6478 (2019)
85. First Demonstration of WSe2 Based CMOS-SRAM
C.-S. Pang, N. Thakuria, S. Gupta, Z. Chen
IEEE IEDM Technical Digest, paper 22.2 (2018)
84. Spin-torque Devices with Hard Axis Initialization as Stochastic Binary Neurons
V. Ostwal, P. Debashis, R. Faria, Z. Chen, J. Appenzeller
Scientific Reports, 8, 16689 (2018)
83. Design of Stochastic Nanomagnets for Probabilistic Spin Logic
P. Debashis, R. Faria, K. Y. Camsari, Z. Chen
IEEE Magnetics Letters, 9, 4305205 (2018)
82. Experimental Demonstration of a Spin Logic Device with Deterministic and Stochastic Mode of Operation
P. Bebashis, Z. Chen
Scientific Reports, 8, 11405 (2018)
81. Tunable Random Number Generation Using Single Superparamagnet with Perpendicular Magnetic Anisotropy
P. Debashis, Z. Chen
IEEE Device Research Conference Digest (2018)
80. First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic Doping
C.-S. Pang, Z. Chen
IEEE Device Research Conference Digest (2018)
79. Large-Area, Single-Layer Molybdenum Disulfide Synthesized at BEOL Compatible Temperature as Cu Diffusion Barrier
C. -L. Lo, K. Zhang, R. S. Smith, K. Shah, J. A. Robinson, Z. Chen
IEEE Electron Device Letters, 39, 873 (2018)
78. Controlled Doping of Transition Metal Dichalcogenides by Metal Workfunction Tuning in Phthalocyanine Compounds
C.J. Benjamin, S. Zhang, Z. Chen
Nanoscale, 10, 5148 (2018)
77. BEOL Compatible Sub-nm Diffusion Barrier for Advanced Cu Interconnects
C. -L. Lo, K. Zhang, J. A. Robinson, Z. Chen
IEEE VLSI-TSA (2018)
76. Studies of Two-dimensional h-BN and MoS2 for Potential Diffusion Barrier Application in Copper Interconnect Technology
C. -L. Lo, M. Catalano, K.K.H. Smithe, L. Wang, S. Zhang, E. Pop, M.J. Kim, Z. Chen
njp 2D Materials and Applications, 1:42 (2017)
75. On the Potential of 2D Layered Materials as Diffusion Barriers for Cu Interconnect Technology
C. -L. Lo, M. Catalano, K.K.H. Smithe, L. Wang, E. Pop, M.J. Kim, Z. Chen
TECHCON, Sept. 10-12, Austin, TX (2017)
74. Molecular Doping of Transition Metal Dichalcogenides using Metal Phythalocyanines
S. N. Zhang, C. J. Benjamin, Z. Chen
IEEE Device Research Conference Digest (2017)
73. Gate Tunable 2D WSe2 Esaki Diode by SiNx Doping
C. -S. Pang, H. Ilatikhameneh, Z. Chen
IEEE Device Research Conference Digest (2017)
72. BEOL Compatible 2D Layered Materials as Ultra-Thin Diffusion Barriers for Cu Interconnect Technology
C. -L. Lo, S. Zhang, T. Shen, J. Appenzeller, Z. Chen
IEEE Device Research Conference Digest (2017)
71. Atomically Thin Diffusion Barriers for Ultra-Scaled Cu Interconnects Implemented by 2D Materials
C. -L. Lo, K.K.H. Smithe, R. Mehta, S. Chugh, E. Pop, Z. Chen
IEEE International Reliability Physics Symposium, April 2-6, Montery, CA (2017)
70. Transfer-free multi-layer graphene as a diffusion barrier
R. Mehta, S. Chugh, Z. Chen
Nanoscale, 9, 1827 (2017)
69. Resist-free fabricated carbon nanotube field-effect transistors with high-quality atomic-layer-deposited platinum contacts
A.J.M. Mackus, N.F.W. Thissen, J.J.L. Mulders, P.H.F. Trompenaars, Z. Chen, W.M.M. Kessels, A.A. Bol
APL, 110, 013101 (2017)
68. Experimental demonstration of nanomagnet networks as hardware for Ising computing
P. Debashis, R. Faria, K.Y. Camsari, J. Appenzeller, S. Datta, Z. Chen
IEEE IEDM Technical Digest, paper 34.3 (2016)
67. Optical relaxation time enhancement in graphene-passivated metal films
S. Chugh, R. Mehta, M. Man, Z. Chen
Scientific Reports, 6, 30519 (2016)
66. Reduction in surface scattering in copper by graphene deposition
S. Chugh, R. Mehta, Z. Chen
TECHCON, Sept. 11-13, Austin, TX (2016)
65. Configurable electrostatically doped high performance bilayer graphene tunnel FET
F. Chen, H. Ilatikhameneh, G. Klimeck, Z. Chen, R. Rahman
IEEE J. EDS, 4, 124 (2016)
64. Bandgap engineering in 2D layered materials
T. Chu, Z. Chen
IEEE IEDM Technical Digest, p. 707 (2015)
63. Electrically tunable bandgaps in bilayer MoS2
T. Chu, H. Ilatikhameneh, G. Klimeck, R. Rahman, Z. Chen
Nano Lett., 15, 8000 (2015)
62. Spin-torque switching of a nano-magnet using giant spin Hall effect
A.V. Penumatcha, S.R. Das, Z. Chen, J. Appenzeller
AIP Advances, 5, 107144 (2015)
61. Impact of scaling on the dipolar coupling in magnet-insulator-magnet structures
A.V. Penumatcha, C.-C. Lin, V. Q. Diep, S. Datta, J. Appenzeller, Z. Chen
IEEE Trans. Magnetics, 52, 3400207 (2015)
60. Transport properties of bilayer graphene field effect transistor
F. Chen, H. Ilatikhameneh, T. Chu, R. Rahman, J. Appenzeller, Z. Chen, G. Klimeck
TECHCON, p. 12.2, Sept. 20-22, Austin, TX (2015)
59. Achieving large transport bandgaps in bilyaer graphene
T. Chu, Z. Chen
Nano Research, 8, 3228 (2015)
58. Achieving a higher on/off ratio in bilayer graphene FET - strain engineering
F. Chen, H. Ilatikhameneh, T. Chu, J. Appenzeller, Z. Chen, G. Klimeck, R. Rahman
SISPAD, p. 177-181, Sept. 9-11, Washington, DC (2015)
57. Direct PECVD growth of graphene at low temperature on SiO2
S. Chugh, R. Mehta, Z. Chen
TECHCON, p. 12.1, Sept. 20-22, Austin, TX (2015)
56. Graphene-encapsulated copper nanowires for improved thermal management of interconnects
R. Mehta, S. Chugh, Z. Chen
InterPACK, p. 48359, July 6-9, San Francisco, CA (2015)
55. Comparison of graphene growth on arbitrary non-catalytic substrates using low-temperature PECVD
S. Chugh, R. Mehta, N. Lu, F.D. Dios, M.J. Kim, Z. Chen
Carbon, 93, 393 (2015)
54. Enhanced electrical and thermal conduction in graphene - encapsulated copper nanowires
R. Mehta, S. Chugh, Z. Chen
Nano. Lett., 15, 2024 (2015)
53. Ultra - dark graphene stack metamaterials
S. Chugh, M. Man, Z. Chen, K. Webb
Appl. Phys. Lett., 106, 061102 (2015)
52. PECVD graphene - a novel thermal interface and barrier material for ultra-scaled copper interconnects
R. Mehta, S. Chugh, Z. Chen
TECHCON, p.3.1, Sept. 7-9, Austin, TX (2014)
51. Ionic gated WSe2 FETs: towards transparent Schottky barriers
A. Prakash, S. Das, R. Mehta, Z. Chen, J. Appenzeller
IEEE Device Research Conference, p. 129, June 22-25, Santa Barbara, CA (2014)
50. Carbon nanotube for high - performance logic
Z. Chen, H.-S. Wong, S. Mitra, A. Bol, L. Peng, G. Hills, N. Thissen
MRS Bulletin, 39, 719 (2014)
49. Graphene stacks as the darkest metamaterial
S. Chugh, M. Man, Z. Chen, K. Webb
Conference on Lasers and Electro-Optics: Science and Innovation, p. SM3H-3, June 8-13, San Jose, CA (2014)
48. Self-aligned edge contacts for 2D layered systems
T. Chu, Z. Chen
The 58th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication,
May 27-30, Washington, DC (2014)
47. Semiconducting bilayer graphene for device applications
T. Chu, Y. Zhao, Z. Chen
TechConnect World Conference and Expo, June 16-18, National Harbor, MD (2014)
46. Improvement of spin transfer torque in asymmetric graphene devices
C.-C. Lin, Y. Gao, A.V. Penumatcha, V.Q. Diep, J. Appenzeller, Z. Chen
ACS Nano, 8, 3807 (2014)
45. Understanding the electrical impact of edge contacts in few-layer graphene
T. Chu, Z. Chen
ACS Nano, 8, 3584 (2014) ACS Nano Podcast Episode 81
44. Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field
C.-C. Lin, A.V. Penumatcha, Y. Gao, V.Q. Diep, J. Appenzeller, Z. Chen
Nano Letters, 13, 5177 (2013)
43. Optimized spin relaxation length in few layer graphene at room temperature
Y. Gao, Y.J. Kubo, C.-C. Lin, Z. Chen, and J. Appenzeller
IEEE IEDM, paper 4.4.1, p. 80 (2012)
42. Graphene nano-mesh contacts and its transport properties
T. Chu, Z. Chen
IEEE Device Research Conference Digest, 185 (2012)
41. Properties of metal-graphene contacts
J. Knoch, Z. Chen, J. Appenzeller
IEEE Transactions on Nanotechnology, 11, 513 (2012)
40. Channel-length dependent transport behaviors of graphene field-effect transistors
S.-J. Han, Z. Chen, A. A. Bol, and Y. Sun
IEEE Electron Device Letters, 32, 812 (2011)
39. Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates
S.-J. Han, J. Chang, A. D. Franklin, A. A. Bol, R. Loesing, D. Guo, G. S. Tulevski, W. Haensch and Z. Chen
IEEE IEDM Technical Digest, 206 (2010)
38. Extremely scaled carbon nanotube transistors
Aaron D. Franklin and Zhihong Chen
Nature Nanotechnology, 5, 858 (2010)
37. Channel and contact length scaling effects in carbon nanotube transistors
Aaron D. Franklin, Ageeth Bol and Zhihong Chen
IEEE Device Research Conference Digest, 275 (2010)
36. Improve variability in carbon nanotube FETs by scaling
Yanning Sun, George Tulevski, Shu-jen Han, Wilfried Haensch and Zhihong Chen
IEEE Device Research Conference Digest, 283 (2010)
35. Study of channel length scaling in large-scale graphene FETs
Shu-jen Han, Yanning, Sun, Ageeth Bol, Wilfried Haensch, and Zhihong Chen
Digest of symposium on VLSI technology, 231 (2010)
34. Decoupling graphene from SiC(0001) via oxidation
S. Oida, F.R. McFeely, J.B. Hannon, R.M. Tromp, M. Copel, Z. Chen, Y. Sun, D.B. Farmer, J. Yurkas
Phys. Rev. B, 82, 041411 (2010)
33. Current scaling in aligned carbon nanotube array transistors with local bottom gating
Aaron D. Franklin, Albert Lin, Philip Wong, and Zhihong Chen
IEEE Electron Device Letters, 31, 644 (2010)
32. Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors
C. Dimitrakopoulos, Y.-M. Lin, A. Grill, D.B. Farmer, M. Freitag, Y. Sun, S.-J. Han, Z. Chen, K. A. Jenkins, Y. Zhu, Z. Liu, T.J. McArdle, J.A. Ott, R. Wisnieff, and Ph. Avouris
J. Vac. Sci. & Tech. B, 28, 985 (2010)
31. Can carbon nanotube transistors be scaled without performance degradation?
Aaron D. Franklin, George Tulevski, James B. Hannon, and Zhihong Chen
IEEE IEDM Technical Digest, p. 561-564 (2009)
30. Graphene nano-structures for device applications
Joerg Appenzeller, Yang Sui, Zhihong Chen
Digest of symposium on VLSI technology, 124, invited paper (2009)
29. Gate modulation of graphene contacts - on the scaling of graphene FETs
Zhihong Chen, Joerg Appenzeller
Digest of symposium on VLSI technology, 128 (2009)
28. Energy dissipation in graphene field-effect transistors
M. Freitag, M.Steiner, Y. Martin, V. Perebeinos, Z. Chen, J.C. Tsang, Ph. Avouris
Nano Lett. 9, 1883 (2009)
27. Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices
Zhihong Chen, Joerg Appenzeller
IEEE IEDM Technical Digest, p. 509-512 (2008)
26. Electrical observation of subband formation in graphene nanoribbons
Yu-Ming Lin, Vasili Perebeinos, Zhihong Chen, Phaedon Avouris
Phys. Rev. B, Vol. 78, 161409 (2008)
25. The first externally assembled gate-all-around carbon nanotube field-effect transistor
Zhihong Chen, Damon Farmer, Sheng Xu, Roy Gordon, Phaedon Avouris, Joerg Appenzeller
IEEE Electron Device Letters, Vol. 29, 183 (2008)
24. A novel strategy for diameter-selective separation and functionalization of single-wall carbon nanotubes
R.M. Tromp, A. Afzali, M. Freitag, D. Mitzi, Z. Chen
Nano Letters, Vol. 8, 469 (2008)
23. Chemically assisted directed assembly of carbon nanotubes for the fabrication of large-scale device arrays
George S. Tulevski, James Hannon, Ali Afzali, Zhihong Chen, Phaedon Avouris, and Cherie R. Kagan
J. Am. Chem. Soc., Vol. 129, 11964-11968 (2007)
22. Carbon based electronics
Phaedon Avouris, Zhihong Chen, Vasili Perebeinos
21. Graphene nano-ribbon electronics
Zhihong Chen, Yu-Ming Lin, Michael J. Rooks, Phaedon Avouris
Physica E:Low-dimensional Systems and Nanostructures, Vol. 40, 228 (2007)
20. Electrical transport and 1/f noise in semiconducting carbon nanotube
Yu-Ming Lin, Joerg Appenzeller, Zhihong Chen, Phaedon Avouris
Physica E: Low-dimensional Systems and Nanostructures, Vol. 37, 72 (2007)
19. Decoupling current and noise in injection controlled, ballistic carbon nanotube devices
Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch, Zhihong Chen, and Phaedon Avouris
IEEE Transactions on Nanotechnology, Vol. 6, 368 (2007)
18. Gate work function engineering for nano-material based circuits
Zhihong Chen, Joerg Appenzeller, Paul M. Solomon, Yu-Ming Lin, Phaedon Avouris
IEEE International Solid-State Circuit Conference, Solicited paper, 68 (2007)
17. Charge dynamics in transparent single-walled carbon nanotube films from optical transmission measurements
F. Borondics, K. Kamaras, M. Nikolou, D.B. Tanner, Z. Chen, A.G. Rinzler
Physical Review B, Vol. 74, 045431 (2006)
16. Reduction of 1/f noise in carbon nanotube devices
Yu-Ming Lin, Joerg Appenzeller, Chang C. Tsuei, Zhihong Chen, Phaedon Avouris
IEEE Device Research Conference Digest, 279 (2006)
15. High performance carbon nanotube ring oscillator
Zhihong Chen, Joerg Appenzeller, Paul M. Solomon, Yu-Ming Lin, Phaedon Avouris
IEEE Device Research Conference Digest, 171 (2006)
14. Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes
Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch, Zhihong Chen, Phaedon Avouris
Nano Letters, Vol. 6, 930 (2006)
13. An integrated logic circuit assembled on a single carbon nanotube
Zhihong Chen, Joerg Appenzeller, Yu-Ming Lin, Jennifer Sippel-Oakley, Andrew G. Rinzler, Jinyao Tang, Shalom J. Wind, Paul M. Solomon, Phaedon Avouris
Science, Vol. 311, 1735 (2006)
12. Classical magnetoresistance in a curved wire
Selman Hershfield, Zhihong Chen
J. Appl. Phys. Vol. 97, 10M105 (2005)
11. Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design
Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch, Zhihong Chen, Phaedon Avouris
IEEE Transactions on Electron Devices, Vol. 52, 2568 (2005)
10. High performance dual-gate carbon nanotube FETs with 40-nm gate length
Yu-Ming Lin, Joerg Appenzeller, Zhihong Chen, Zhi-Gang Chen, Hui-Ming Cheng, Phaedon Avouris
IEEE Electron Device Letters, Vol. 26, 823 (2005)
9. Impact of the nanotube diameter on the performance of CNFETs
Zhihong Chen, Joerg Appenzeller, Joachim Knoch, Yu-Ming Lin, Phaedon Avouris
IEEE Device Research Conference Digest, 237 (2005)
8. The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
Zhihong Chen, Joerg Appenzeller, Joachim Knoch, Yu-Ming Lin, Phaedon Avouris
Nano Letters, Vol.5, 1497 (2005)
7. An extended model for carbon nanotube field-effect transistors
J. Knoch, S. Mantl, Y.-M. Lin, Z. Chen, Ph. Avouris, J. Appenzeller
IEEE Device Research Conference Digest, 135 (2004)
6. Wide range optical studies on transparent SWNT films
F. Borondics, K. Kamaras, Z. Chen, A.G. Rinzler, M. Nikolou, D.B. Tanner
Proceedings of the XVIII Winter School on the Electronic Properties of Novel Materials, American Institute of Physics, NY (2004)
5. Metallic/semiconducting nanotube separation and ultra-thin, transparent nanotube films
Z. Chen, Z. C. Wu, J. Sippel and A. G. Rinzler
Proceedings of the XVIII Winter School on the Electronic Properties of
Novel Electronic Materials, American Institute of Physics, NY (2004)
Zhuangchun Wu, Zhihong Chen*, Xu Du, Jonathan M. Logan, Jennifer Sippel,
Maria Nikolou, Katalin Kamaras, John R. Reynolds, David B. Tanner,
Arthur F. Hebard, Andrew G. Rinzler (* First two authors contributed equally to the manuscript)
Science, Vol. 305, 1273 (2004)
K. Lee, Z. Wu, Z. Chen, F. Ren, S.J. Pearton, A.G. Rinzler
Nano Letters, Vol.4, 911, (2004)
Z. Chen, X. Du, M. Du, D. Rancken, H. Cheng, A.G. Rinzler
Nano Letters, Vol.3, 1245 (2003)
1. Length sorting cut single wall carbon nanotubes by high performance liquid chromatography
E. Farkas, M.E. Anderson, Z. Chen, A.G. Rinzler
Chemical Physics Letters 363, 111 (2002)